s mhop microelectronics c orp. a symbol v ds v gs i dm 0.55 62.5 w a p d c 227 -55 to 150 i d units parameter 100 120 480 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w product summary v dss i d r ds(on) (m ) max 100v 120a 4.0 @ vgs=10v features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 package. stp series to-220 s d g s g d n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous b t c =25 c -pulsed b a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja www.samhop.com.tw aug,22,2016 1 details are subject to change without notice. a 76 t c =100 c t c =100 c 91 w STP10N03 ver 1.0 green product e as single pulse avalanche energy c mj 300
4 symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) 2 v 3.3 g fs 47 s v sd c iss 6900 pf c oss 1250 pf c rss 47 pf q g 48 nc 56 nc q gs 75 nc q gd 33 t d(on) 117 ns t r 40 ns t d(off) 37 ns t f ns gate-drain charge v ds =50v,v gs =0v switching characteristics gate-source charge v dd =50v i d =1a v gs =10v r gen = 2.5 ohm total gate charge rise time turn-off delaytime v ds =50v,i d =20a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =50a v ds =10v , i d =20a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 4.0 a f=1.0mhz a v ds =50v,i d =20a, v gs =10v drain-source diode characteristics v gs =0v,i s =50a 1.3 v www.samhop.com.tw 2 aug,22,2016 STP10N03 ver 1.0 3 0.85 notes a.guaranteed by design, not subject to production testing. b.drain current limited by maximum junction temperature. c.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure10) d.mounted on fr4 board of 1 inch 2 , 2oz.
www.samhop.com.tw aug,22,2016 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature 100 80 60 40 0 0 1 2 3 4 5 100 80 60 40 20 0 3 4 7 6 5 tj=125 c 25 c 8 6 4 2 0 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =20a 20 10 30 25 20 15 STP10N03 ver 1.0 v gs =10v v gs =6v v gs =6.5v v gs =8v v gs =5v v gs =5.5v v ds =5v v gs =10v is, source-drain current(a) v sd , body diode forward voltage(v) figure 6. body diode forward voltage variation with source current 1.e-05 0.0 0.8 0.6 0.4 0.2 1.2 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 5. on-resistance vs. gate-source voltage 10 8 6 4 2 0 10 5 125 c 25 c i d =20a 9 8 7 6 1.e-04 1.e-03 1.e-02 1.e-01 1.e + 00 1.e + 01 1.e + 02 1.0 125 c 25 c
www.samhop.com.tw aug,22,2016 4 c, capacitance(pf) v ds , drain-to-source voltage(v) figure 7. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 8. gate charge ciss coss crss 10000 8000 6000 4000 2000 0 40 60 80 100 0 20 10 8 6 4 2 0 v ds =50v i d =20a 0 120 100 80 60 40 20 STP10N03 ver 1.0 i d , drain current(a) v ds , drain-source voltage(v) figure 9. maximum safe operating area 0.1 1 10 100 100 10 1 0.3 v gs =10v single pulse t c =25 c d c 10ms 1m s 100us 10us r d s (on) limit 1000
t p v (br )dss i as 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 www.samhop.com.tw 5 unclamped inductive test circuit unclamped inductive waveforms figure 10a. figure 10b. square wave pulse duration (msec) figure 11. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance r g i as 0.01 t p d.u.t l v ds + - dd 20v v aug,22,2016 STP10N03 ver 1.0
www.samhop.com.tw 6 aug,22,2016 STP10N03 ver 1.0
to-220 tube www.samhop.com.tw 7 aug,22,2016 STP10N03 ver 1.0
www.samhop.com.tw 8 top marking definition to-220 xxxxxx product no. samhop logo production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STP10N03 aug,22,2016 STP10N03 wafer lot no. smc internal code no. (a,b,c...z) ver 1.0
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